ALP Graphene Coated MOSFET Shows Better Thermal Performance by about 15%

ALP Graphene Coated MOSFET Shows Better Thermal Performance by about 15% 
In a recent thermal performance evaluation, the ALPC009N04ESQ MOSFET demonstrated a significant edge over its counterpart, the PWC009N04ES, under identical operating conditions. The test, conducted using a suspended PCB setup and infrared thermal imaging, revealed that the ALP device maintained notably lower surface temperatures—underscoring its superior thermal efficiency. 

Test Methodology 

The experiment was designed to simulate real-world stress conditions:

  • Setup: PCB suspended in air

  • Operating Conditions: Gate-source voltage (Vgs) of 10V, continuous current of 40A

  • Duration: 30 minutes

  • Measurement Tools: DC power supply and infrared thermometer

Both MOSFETs were housed in a universal package and subjected to identical thermal loads.

Results at a Glance

Thermal imaging captured after 30 minutes of operation showed.

Device Surface Temp After 30 Min Thermal Delta Coating Technology
PWC009N04ES
~100.8°C
~
Standard
ALPC009N04ESQ
~87.0°C
~13.8°C
Graphene-enhanced

The graphene coating on the ALP MOSFET plays a pivotal role in reducing thermal resistance, enabling faster heat dissipation and lower junction temperatures.

Across three test groups, the ALP MOSFET consistently registered surface temperatures approximately 13–15°C lower than the PWC device, confirming a minimum of 15% better thermal characteristics

Implications for Design Engineers

The results underscore the value of graphene-based thermal management in high-current applications. For design engineers, this translates to:

  • Improved reliability and component longevity

  • Reduced need for external cooling

  • Enhanced performance under sustained load

The ALPC009N04ESQ sets a new benchmark in thermal efficiency, making it a compelling choice for power electronics where heat control is critical.

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